Apparatus and method for forming thin film

Coating apparatus – Gas or vapor deposition – Multizone chamber

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118724, 118725, 118727, 118320, C23C 1600

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058633383

ABSTRACT:
A forming apparatus of a thin film, includes a processing chamber where a predetermined process is carried out on a surface of a supplied substrate, and a feeding device, which is provided in the processing chamber, for feeding material to form an organic molecular layer including silicon or germanium on the surface of the substrate. A forming method of a thin film, includes steps of forming a thin film on a surface of a supplied substrate in a processing chamber, and feeding material for forming an organic molecular layer including silicon or germanium on the formed thin film on the surface of the substrate through a feeding device in the processing chamber, and then forming the organic molecular layer on the surface of the substrate.

REFERENCES:
patent: 4048955 (1977-09-01), Anderson
patent: 4628006 (1986-12-01), Rathbun
patent: 4847469 (1989-07-01), Hofmann
patent: 4932353 (1990-06-01), Kawata
patent: 4947789 (1990-08-01), Hussla
patent: 5203925 (1993-04-01), Shibuya
patent: 5286296 (1994-02-01), Sato
Burggraaf, Semiconductor International, Aug. 1990, pp. 56-63.

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