Apparatus and method for forming semiconductor thin layer

Details Apparatus and method for forming semiconductor thin layer Apparatus and method for forming semiconductor thin layer

1997-03-12

2000-07-18

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118715, 118728, 438758, C23C 1600

Patent

active

060902116

ABSTRACT:
A method and apparatus for forming a semiconductor thin layer on a substrate surface employs a gas outlet for supplying gas to the substrate, a rotatable holder for holding the substrate thereon such that a surface of the substrate is exposed to the gas while the substrate orbits with rotation of the holder, and a heater generates and supplies heat energy to the substrate. A cover wall extends over the surface of the substrate which is exposed to the gas. A distance between the exposed surface of the substrate and the cover wall in a direction parallel to a rotational axis of the rotatable holder decreases radially outward over the substrate orbiting with rotation of the holder about a rotational axis of the holder.

REFERENCES:
patent: 3696779 (1972-10-01), Murai
patent: 3750620 (1973-08-01), Eversteijn
patent: 4105810 (1978-08-01), Yamazaki
patent: 4651673 (1987-03-01), Muething
patent: 4673799 (1987-06-01), Mahawili
patent: 4728863 (1988-03-01), Wertheimer
patent: 4732110 (1988-03-01), Parsons
patent: 4961399 (1990-10-01), Frijlink
patent: 5033407 (1991-07-01), Mizuno
patent: 5252131 (1993-10-01), Kiyama
patent: 5268067 (1993-12-01), Dostalik
patent: 5370738 (1994-12-01), Watanabe
Groves, J. Crystal Growth, 93 (1988) 242-247.
Frijlink, "A New Versatile, Large Size MOVPE Reactor," J. Crystal Growth vol. 93, 1988, p.p. 207-215.
Tompa, et al., "Design and operating characteristics of a metalorganic vapor phase epitaxy production scale, vertical, high speed rotating disk reactor," J. Crystal Growth vol. 145, 1994, p.p. 655-661.

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