Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2004-07-14
2010-06-22
Wells, Nikita (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492300, C250S288000, C118S7230FI, C438S513000, C356S316000
Reexamination Certificate
active
07741621
ABSTRACT:
There is disclosed an apparatus and method for focused electric field enhanced plasma-based ion implantation. The apparatus includes an implantation chamber, a vacuum pump for maintaining the pressure in the implantation chamber at a desired level, a sample holder, means for applying a negative potential to the sample holder, and means for supplying a gaseous or vaporized implantation material. The supplying means takes the form of a feed conduit having an exit opening located in the implantation chamber above the sample holder, and when a negative potential is applied to the sample holder the exit opening of the feed conduit is maintained at a potential that is positive relative to the sample holder.
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Chu Paul K.
Li Liuhe
City University of Hong Kong
Heslin Rothenberg Farley & & Mesiti P.C.
Wells Nikita
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