Apparatus and method for etching semiconductor wafer

Details Apparatus and method for etching semiconductor wafer Apparatus and method for etching semiconductor wafer

1994-07-06

1995-03-07

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

C23F 102

Patent

active

053954742

ABSTRACT:
A semiconductor wafer etching apparatus is capable of anisotropically etching a large-diameter semiconductor wafer with high accuracy without causing the semiconductor wafer to be charged. First, the apparatus cools the wafer in an atmosphere of a nitrogen or a halogen gas so that the wafer adsorbs and is covered by atoms of the gas. Then, a fast atom beam source of the apparatus generates an electrically neutral fast atom beam of gas atoms or molecules to etch the semiconductor wafer. The etching speed is promoted by an interaction of the adsorbed atoms and the fast atom beam.

REFERENCES:
patent: 4049533 (1977-09-01), Golyanov
patent: 4713542 (1987-12-01), Campana
patent: 4733073 (1988-03-01), Becker
patent: 4740298 (1988-04-01), Andresen
patent: 4920264 (1990-04-01), Becker
patent: 5055672 (1991-10-01), Nagai
patent: 5111042 (1992-05-01), Sullivan
patent: 5216241 (1993-06-01), Hatakeyama
patent: 5221841 (1993-06-01), Nagai
patent: 5238499 (1993-08-01), van de Ven
patent: 5243189 (1993-09-01), Nagai
patent: 5266154 (1993-11-01), Tatsumi
patent: 5284544 (1994-02-01), Mizutani
Wolf, Silicon Processing for the VLSI ERA, vol. 1, 1986, pp. 392-393.
Tatsumi Mizutani & Takashi Yunogami, "Neutral-Beam-Assisted Etching of SiO.sub.2 --A Charge-Free Etching Process", vol. 29, No. 10, Oct. 1970, p. 2220-2222.
Sakaue, Iseda, Asami, Yamamoto, "Atomic Layer Controlled Digital Etching of Silicon", Japanese Journal of Applied Physics, vol. 29, No. 11, Nov. 1990, pp. 2648-2652.
Meguro, Ishii, Kodama, Hamagaki, Hara, Yamamoto, Aoyagi, "Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System", Jap. J. of Applied Physics, vol. 29, No. 10, Oct. 1990, pp. 2216-2219.
Horiike, Tanaka, Nakano, Iseda, Sakaue, Shido, Miyazaki, Hirose, "Digital chemical vapor deposition and etching technologies for semiconductor processing".
Mizutani, Yunogami, Tsujimoto, "Lower plasma-induced damage in SiO.sub.2 /Si at lower temperatures", Appl. Phys. Lett. 57(16), 15 Oct. 1990, pp. 1654-1656.
Barker, Mayer, Pearson, "Surface studies of and a mass balance model for Ar.sup.+ ion-assisted Cl.sub.2 etching of Si".
Mele, Nulman, Krusius, "Selective and anisotropic reactive ion etch of LPCVD silicon nitride with CHF.sub.3 based gases".
Harold F. Winters, "The role of chemisorption in plasma etching", J. Appl. Phys. 49(10), Oct. 1978, pp. 5165-5170.
Mizutani et al., "Neutral-Beam-Assisted Etching of SiO.sub.2 --A Charge-Free Etching Process", Japanese Journal of Applied Physics, 1990, pp. 166-168.
Patent Abstracts of Japan, vol. 15, No. 383 (E-1116) Sep. 27, 1991.
Kuwano et al., "Silicon dioxide fine patterning by reactive fast atom beam etching", Journal of Vacuum Science and Technology: Part B, vol. 6, Sep. 1988, 1565-1569.

Affiliated with

Also associated with

Rating

Apparatus and method for etching semiconductor wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus and method for etching semiconductor wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for etching semiconductor wafer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1403775