Apparatus and method for electrolytically depositing copper...

Chemistry: electrical and wave energy – Apparatus – Electrolytic

Reexamination Certificate

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C204S267000

Reexamination Certificate

active

06932892

ABSTRACT:
A process for applying a metallization interconnect as to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced sed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.

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