Apparatus and method for dynamically mixing slurry for chemical

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156345, 216 88, 216 89, 3661541, 3661621, B24B 5704, B24B 100

Patent

active

057504407

ABSTRACT:
An apparatus and a method of dynamically mixing a slurry for a chemical mechanical polish includes pumping an abrasive (33) and an oxidizer (37) into a first portion (19) of a slurry mixer (11), using a magnetically coupled stirrer (17) to blend the abrasive (33) and the oxidizer (37) into a slurry (41) in the first portion (19) of the slurry mixer (11), transporting the slurry (41) through a diffuser (21) and into a second portion (22) of the slurry mixer (11), keeping the slurry (41) in the second portion (22) of the slurry mixer (11) for a residence time, and, subsequently, using the slurry (41) to chemical mechanical polish a semiconductor substrate (43). The diffuser (21) reduces air entrainment of the slurry (41), and the residence time enables the slurry (41) to be used when it has a maximum polishing rate.

REFERENCES:
patent: 4059929 (1977-11-01), Bishop
patent: 4242841 (1981-01-01), Ushakov et al.
patent: 4439042 (1984-03-01), Bertoglio
patent: 5407526 (1995-04-01), Danielson et al.
patent: 5478435 (1994-12-01), Murphy et al.
patent: 5584959 (1994-08-01), Kimura et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Apparatus and method for dynamically mixing slurry for chemical does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus and method for dynamically mixing slurry for chemical , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for dynamically mixing slurry for chemical will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-978800

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.