Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1995-11-20
1998-05-12
Breneman, R. Bruce
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
156345, 216 88, 216 89, 3661541, 3661621, B24B 5704, B24B 100
Patent
active
057504407
ABSTRACT:
An apparatus and a method of dynamically mixing a slurry for a chemical mechanical polish includes pumping an abrasive (33) and an oxidizer (37) into a first portion (19) of a slurry mixer (11), using a magnetically coupled stirrer (17) to blend the abrasive (33) and the oxidizer (37) into a slurry (41) in the first portion (19) of the slurry mixer (11), transporting the slurry (41) through a diffuser (21) and into a second portion (22) of the slurry mixer (11), keeping the slurry (41) in the second portion (22) of the slurry mixer (11) for a residence time, and, subsequently, using the slurry (41) to chemical mechanical polish a semiconductor substrate (43). The diffuser (21) reduces air entrainment of the slurry (41), and the residence time enables the slurry (41) to be used when it has a maximum polishing rate.
REFERENCES:
patent: 4059929 (1977-11-01), Bishop
patent: 4242841 (1981-01-01), Ushakov et al.
patent: 4439042 (1984-03-01), Bertoglio
patent: 5407526 (1995-04-01), Danielson et al.
patent: 5478435 (1994-12-01), Murphy et al.
patent: 5584959 (1994-08-01), Kimura et al.
Mullins James M.
Vanell James F.
Ward Steven D.
Adjodha Michael E.
Breneman R. Bruce
Chen George C.
Motorola Inc.
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