Electricity: measuring and testing – Magnetic – With means to create magnetic field to test material
Reexamination Certificate
2005-02-22
2005-02-22
Niebling, John F. (Department: 2812)
Electricity: measuring and testing
Magnetic
With means to create magnetic field to test material
Reexamination Certificate
active
06859031
ABSTRACT:
Systems and methods consistent with principles of the present invention allow contactless measuring of various kinds of electrical activity within an integrated circuit. The invention can be used for high-bandwidth, at speed testing of various devices on a wafer during the various stages of device processing, or on packaged parts at the end of the manufacturing cycle. Power is applied to the test circuit using conventional mechanical probes or other means, such as CW laser light applied to a photoreceiver provided on the test circuit. The electrical test signal is introduced into the test circuit by stimulating the circuit using a contactless method, such as by directing the output of one or more modelocked lasers onto high-speed receivers on the circuit, or by using a high-speed pulsed diode laser. The electrical activity within the circuit in response to the test signal is sensed by a receiver element, such as a time-resolved photon counting detector, a static emission camera system, or by an active laser probing system. The collected information is used for a variety of purposes, including manufacturing process monitoring, new process qualification, and model verification.
REFERENCES:
patent: 4681449 (1987-07-01), Bloom et al.
patent: 4758092 (1988-07-01), Heinrich et al.
patent: 5508610 (1996-04-01), Feeney
patent: 5631571 (1997-05-01), Spaziani
patent: 5640539 (1997-06-01), Goishi et al.
patent: 5663967 (1997-09-01), Prasad et al.
patent: 5721688 (1998-02-01), Barnwell
patent: 5872360 (1999-02-01), Paniccia et al.
patent: 5905577 (1999-05-01), Wilsher et al.
patent: 5940545 (1999-08-01), Kash et al.
patent: 5949900 (1999-09-01), Nakamura et al.
patent: 6107107 (2000-08-01), Bruce et al.
patent: 6184696 (2001-02-01), White et al.
patent: 0 652 444 (1995-05-01), None
K. Soumyanath et al., “Accurate On-Chip Interconnect Evaluation: A Time-Domain Technique”, IEEE Journal of Solid-State Circuits, vol. 34, No. 5, pp. 623-631, May 1999.
Hirotaka Komoda et al., “Optical Beam Induced Current Techniques for Failure Analysis of Very Large Scale Integrated Circuit Devices,” Japanese Journal of Applied Physics, Tokyo, JP, vol. 33, No. 6A, Part 1, Jun. 1, 1994, (1994) pp3393-3401.
Manus et al., “Invited Picosecond Imaging Circuit Analysis of ULSI Microprocessors,” 2002 IEEE MIT-S International Mocrowave Symposium Digest (IMS 2002), Seattle, WA Jun. 2-7, 2002, IEEE MTT-S International Microwave Symposium, New York, NY; IEEE, US, vol. 3 of 3. Jun. 2, 2002, pp. 1505-1508 ISBN: 0-7803-7239-5.
H. H. Berger et al., “Contactless Function Test of Integrated Circuits on the Wafer,” Proceedings of the 22nd International Symposium for Testing and Failure Analysis, Nov. 18-22, 1996, Los Angeles, California, pp. 263-266.
F. Esfahani et al., “Small Area Optical Inputs for High Speed CMOS Circuits,” Ninth Annual IEEE International ASIC Conference and Exhibit, Sep. 23-27, 1996, Rochester, New York, pp. 7-10.
H. Zimmerman & T. Heide, “A Monolithically Integrated 1-Gb/s Optical Receiver in 1-μm CMOS Technology,” IEEE Photonics Technology Letters, vol. 13, No. 7, Jul. 2001, pp 711-713.
N. Khurana & C-L Chiang, “Analysis of Product Hot Electron Problems by Gated Emission Microscopy,” International Reliability Physics Symposium, 1986, pp. 189-194.
F. Esfahani, “Testability Improvement of Highly Integrated Circuits by Optical Injection of Logical Levels into the Circuit,” 1997, pp. 288-295.
P. Bellutti et al., “Fowler Nordheim Induced Light Emission from MOS Diodes,” IEEE 2000 International Conference on Microelectronic Test Structures, pp. 223-226.
H. H. Berger et al., “Optical Signal Injection for High-Speed Wafer Level Function of Integrated Circuits,” IEEE 1997 International Conference on Microelectronic Test Structures, vol. 10, Mar. 1997, pp. 39-42.
T. Ohzone et al., “A Study on Hot-Carrier-Induced Photoemmision in n-MOSFETs under Dynamic Operation,” IEEE 2000 International Conference on Microelectronic Test Structures, pp. 75-80.
H. Zimmermann et al., “Monolithic High-Speed CMOS-Photoreceiver,” IEEE Photonics Technology Letters, vol. 11, No. 2, Feb. 1999, pp. 254-256.
B. R. Hemenway et al., “Optical Detection of Charge Modulation in Silicon Integrated Circuits Using a Multimode Laser-Diode Probe,” IEEE Electron Device Letters, vol. EDL-8, No. 8, Aug. 1987, pp. 344-346.
H. K. Heinrich et al, “Picosecond Backside Optical Detection of Internal Signals in Flip-Chip Mounted Silicon VLSI Circuits,” Microelectronic Engineering, vol. 16, 1992, pp. 313-324.
H. K. Heinrich et al., “Backside Optical Measurements of Picosecond Internal Gate Delays in a Flip-Chip Packaged Silicon VLSI Circuit,” IEEE Photonics Technology Letters, vol. 3, No. 7, Jul. 1991, pp. 673-675.
Goldberger Itzik
Kasapi Steven
Pakdaman Nader
Credence Systems Corporation
Niebling John F.
Pogodin, Esq. Pavel
Stevenson Andre′ C.
LandOfFree
Apparatus and method for dynamic diagnostic testing of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus and method for dynamic diagnostic testing of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for dynamic diagnostic testing of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3478382