Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2005-05-17
2005-05-17
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S002000, C257S003000, C257S005000, C257S295000, C257S310000, C257S758000
Reexamination Certificate
active
06894304
ABSTRACT:
Two PCRAM cells which use a common anode between them are disclosed. The two memory cells can be accessed separately to store two bits of data which can be read and written, and can be stacked one over the other with a common anode between them to form an upper and lower cell pair. Respective access transistors are provided for the cells and arranged to permit reading and writing of the cells.
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Dickstein , Shapiro, Morin & Oshinsky, LLP
Fenty Jesse A.
Thomas Tom
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