Etching a substrate: processes – Nongaseous phase etching of substrate – Using film of etchant between a stationary surface and a...
Patent
1996-11-14
1999-06-22
Utech, Benjamin
Etching a substrate: processes
Nongaseous phase etching of substrate
Using film of etchant between a stationary surface and a...
156345, C23F 102, H01L 21302
Patent
active
059140534
ABSTRACT:
In double-side polishing of semiconductor wafers, not only the two main surfaces but also the surface of the edge portion can be polished in one operation with cost reduction and freedom from contamination. An apparatus with twin polishing turn tables is used in the double-side polishing and the inner peripheral edge of each carrier hole formed in a wafer carrier is profiled such that the sectional profile of the inner peripheral edge is substantially the copy of the edge of the wafer placed in the hole.
REFERENCES:
patent: 4588473 (1986-05-01), Hisatomi et al.
patent: 5110764 (1992-05-01), Ogino
patent: 5316620 (1994-05-01), Hasegawa et al.
J. Haisma et al., "Improved Geometry of Double-Sided Polished Parallel Wafers Prepared for Direct Wafer Bonding", Applied Optics, vol. 33, No. 34, Dec. 1, 1994, pp. 7945-7954.
Kudo Hideo
Masumura Hisashi
Suzuki Kiyoshi
Goudreau George
Shin-Etsu Handotai & Co., Ltd.
Utech Benjamin
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