Apparatus and method for doping

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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250398, 2504922, H01J 37317

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058922350

ABSTRACT:
An apparatus for doping a material includes an ion current which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.

REFERENCES:
patent: 4276477 (1981-06-01), Enge
patent: 4804852 (1989-02-01), Rose et al.
patent: 5696382 (1997-12-01), Kwon
patent: 5721687 (1998-02-01), Lamartine et al.
patent: 5767522 (1998-06-01), Kodama
"Nikkei Microdevices," p. 89, May, 1996.

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