Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1997-05-12
1999-04-06
Nguyen, Kiet T.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250398, 2504922, H01J 37317
Patent
active
058922350
ABSTRACT:
An apparatus for doping a material includes an ion current which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.
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patent: 5696382 (1997-12-01), Kwon
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patent: 5767522 (1998-06-01), Kodama
"Nikkei Microdevices," p. 89, May, 1996.
Hamatani Toshiji
Tanaka Koichiro
Yamazaki Shunpei
Nguyen Kiet T.
Semiconductor Energy Laboratory Co,. Ltd.
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