Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1991-11-17
1994-03-22
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 15, 257184, H01L 2714, H01L 3100
Patent
active
052967204
ABSTRACT:
A multiple quantum well (MQW) radiation sensor distinguishes radiation within a desired bandwidth, particularly long wavelength infrared radiation (LWIR), from background high intensity noise radiation that excites majority-minority charge carrier pairs. A minority charge carrier collector is provided at one end of the MQW, and the flow of minority charge carriers to the collector is sensed. The minority charge carrier flow provides an indication of the majority charge carrier flow that is attributable to the noise radiation rather than to radiation within the desired bandwidth, and can thus be used to provide a corrected indication of the desired bandwidth radiation.
REFERENCES:
patent: 5031013 (1991-07-01), Choi
patent: 5121181 (1992-06-01), Smith, III et al.
patent: 5126552 (1992-06-01), Hayes, Jr.
patent: 5155362 (1992-10-01), Baker
Wen Cheng P.
Wu Chan-Shin
Crane Sara W.
Denson-Low Wanda K.
Hughes Aircraft Company
Schubert William C.
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