Apparatus and method for determining power in plasma processing

Details Apparatus and method for determining power in plasma processing Apparatus and method for determining power in plasma processing

1992-06-23

1993-12-28

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156626, 156627, 118723E, 324 96, H01L 2100, C23C 1650

Patent

active

052736105

ABSTRACT:
An apparatus and method including a current sensor having a radiation emitter, such as an electrical resistor, and a radiation detector, such as an infrared detector, for sensing current flowing to a plasma generating electrode from a radio frequency (RF) power source. The resistor may include a high emissivity infrared coating to enhance efficiency of the current sensor. The infrared detector provides a highly accurate indication of the average or root-mean-square current delivered to the plasma generating electrode without introducing parasitic capacitance into the measurement, or sensing, circuit. A voltage sensor and a second current sensor, such as a torroidal current sensor, provide the voltage and phase angle of the current delivered to the plasma generating electrode to thereby permit calculation of the power delivered to the plasma generating electrode. A processor controls the RF source responsive to the sensed average current, sensed voltage, and sensed phase angle of the current.

REFERENCES:
patent: 4609426 (1986-09-01), Ogawa et al.
patent: 4936967 (1990-06-01), Ikuhara et al.
patent: 5057185 (1991-10-01), Thomas, III et al.
Harshbarger et al., "Optical Detector to Monitor Plasma Etching", vol. 7, No. 3, Journal of Electronic Materials, 429-440 (1978).
Rummel, "Monitoring and Control of RF Electrical Parameters Near Plasma Loads", Industrial Heating, May 1991.

Affiliated with

Also associated with

Rating

Apparatus and method for determining power in plasma processing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus and method for determining power in plasma processing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for determining power in plasma processing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1540238