Apparatus and method for detecting word line leakage in...

Static information storage and retrieval – Floating gate – Disturbance control

Reexamination Certificate

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C365S185040, C365S189070

Reexamination Certificate

active

07835178

ABSTRACT:
Some embodiments of the present invention provide a memory device including a first memory array having a first word line and a comparator circuit having a first terminal coupled to a reference voltage and a second terminal coupled to a first switch selectively coupling the first word line to a power source or the second terminal. In an embodiment, the reference voltage is selected for identifying a leakage condition associated with the first word line. In another embodiment, the first switch is configured to couple the first word line to the power source for a first predetermined period of time to allow charging of the first word line. In another embodiment, the first switch is configured to couple the first word line to the second terminal of the comparator for at least a second predetermined period of time.

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patent: 6222768 (2001-04-01), Hollmer et al.
patent: 6768679 (2004-07-01), Le et al.
patent: 7023734 (2006-04-01), Chen
patent: 7272035 (2007-09-01), Chen et al.
patent: 7532513 (2009-05-01), Chen et al.
patent: 2008/0192545 (2008-08-01), Chen

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