Apparatus and method for detecting defects on silicon dies on a

Semiconductor device manufacturing: process – With measuring or testing

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438 16, 438460, G01R 3126, H01L 2166

Patent

active

059435518

ABSTRACT:
An apparatus and method for detecting defects on silicon dies on a silicon wafer (16) comprising an image acquisition system (10) and a computer (32) that determines a statistical die model by analyzing a random selection of dies (42) within a die matrix (37) and compares the statistical die model to matrices of silicon dies (38) to determine which silicon dies (38) have surface defects, is disclosed.

REFERENCES:
patent: 5633173 (1997-05-01), Bae
patent: 5643404 (1997-07-01), Muraoka et al.
patent: 5665609 (1997-09-01), Mori
patent: 5744381 (1998-04-01), Tabata et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Apparatus and method for detecting defects on silicon dies on a does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus and method for detecting defects on silicon dies on a , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for detecting defects on silicon dies on a will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-476003

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.