Apparatus and method for correcting light proximity effects by p

Details Apparatus and method for correcting light proximity effects by p Apparatus and method for correcting light proximity effects by p

1995-09-15

1998-09-29

Teska, Kevin J.

Boots, shoes, and leggings

364490, G06F 9455

Patent

active

058156852

ABSTRACT:
An apparatus and method corrects for light proximity effects in exposure of a resist material. A circuit pattern to be formed on the wafer is defined by design data and that data is compressed for processing. The data is employed to prepare an optical projection image for transferring the circuit pattern onto the wafer. Before the pattern is transferred, the size of the pattern on the wafer that will result is predicted, using the optical projection image. The predicted pattern size is compared to the desired pattern size and, if there is sufficient difference, the compressed design data is corrected to produce the desired circuit pattern. Thereafter, the design data that has been corrected is expanded and output for use in the pattern transfer by light exposure using a mask produced according to the invention.

REFERENCES:
patent: 5097138 (1992-03-01), Wakabayashi et al.
patent: 5424173 (1995-06-01), Wakabayashi et al.
patent: 5532090 (1996-07-01), Borodovsky
patent: 5553274 (1996-09-01), Kiebmann

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