Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Slope control of leading or trailing edge of rectangular or...
Reexamination Certificate
2008-04-29
2008-04-29
Richards, N. Drew (Department: 2816)
Miscellaneous active electrical nonlinear devices, circuits, and
Signal converting, shaping, or generating
Slope control of leading or trailing edge of rectangular or...
C327S080000, C327S387000, C327S540000, C326S029000, C326S031000
Reexamination Certificate
active
11501798
ABSTRACT:
An apparatus and method for improving memory cell reliability is disclosed. The slew rate is reduced in an applied voltage signal used to program a memory cell when Fowler-Nordheim (FN) tunneling injection is detected. The applied programming signal is provided by a charge pump that is preferably a regulated charge pump. The charge pump is selectively controlled by a slew rate control circuit when FN tunneling injection is detected by a voltage level detection circuit at a predetermined threshold voltage level.
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Daga Jean-Michel
Fort Jimmy
Atmel Corporation
Luu An T.
Richards N. Drew
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