Apparatus and method for charge pump slew rate control

Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Slope control of leading or trailing edge of rectangular or...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C327S080000, C327S387000, C327S540000, C326S029000, C326S031000

Reexamination Certificate

active

11501798

ABSTRACT:
An apparatus and method for improving memory cell reliability is disclosed. The slew rate is reduced in an applied voltage signal used to program a memory cell when Fowler-Nordheim (FN) tunneling injection is detected. The applied programming signal is provided by a charge pump that is preferably a regulated charge pump. The charge pump is selectively controlled by a slew rate control circuit when FN tunneling injection is detected by a voltage level detection circuit at a predetermined threshold voltage level.

REFERENCES:
patent: 4685083 (1987-08-01), Leuschner
patent: 5359552 (1994-10-01), Dhong et al.
patent: 5596532 (1997-01-01), Cernea et al.
patent: 5638007 (1997-06-01), Sabin
patent: 5693570 (1997-12-01), Cernea et al.
patent: 5742193 (1998-04-01), Colli et al.
patent: 5768208 (1998-06-01), Bruwer et al.
patent: 5818766 (1998-10-01), Song
patent: 5828245 (1998-10-01), Brambilla et al.
patent: 5939909 (1999-08-01), Callahan, Jr.
patent: 5949259 (1999-09-01), Garcia
patent: 6127880 (2000-10-01), Holst et al.
patent: 6154101 (2000-11-01), Zou et al.
patent: 6388505 (2002-05-01), Ribellino et al.
patent: 6483377 (2002-11-01), White et al.
patent: 6492686 (2002-12-01), Pappert et al.
patent: 6646415 (2003-11-01), Nebrigic et al.
patent: 6788608 (2004-09-01), Tran et al.
patent: 6801080 (2004-10-01), Arcus
patent: 6819163 (2004-11-01), Gregoire, Jr.
patent: 6836179 (2004-12-01), Mizuno et al.
patent: 6859391 (2005-02-01), Combe et al.
patent: 6914476 (2005-07-01), Ingino, Jr.
patent: 6992934 (2006-01-01), Sarin et al.
patent: 6992937 (2006-01-01), Tran et al.
patent: 6998891 (2006-02-01), Hsu et al.
patent: 7015721 (2006-03-01), Nguyen et al.
patent: 7035151 (2006-04-01), Tran et al.
patent: 7049872 (2006-05-01), Diorio et al.
patent: 7061295 (2006-06-01), Saiki et al.
patent: 7250810 (2007-07-01), Tsen et al.
patent: 2004/0251955 (2004-12-01), Neidorff
patent: 2005/0134244 (2005-06-01), Sanzo et al.
patent: 2005/0219903 (2005-10-01), Daga
patent: 2006/0123280 (2006-06-01), Tran et al.
Horace G. Jackson et al. “Analysis and Design of Digital Integrated Circuits: In Deep Submicron Technology. Thid Edition. Semiconductor Memory Design” (2004) 359-398.
P. Canet et al. “Improvement of EEPROM cell reliability by optimization of signal programming.” Journal of Non-Crystalline Solids 280 (2001) 116-121. www.elsevier.com/locate/jnoncrysol.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Apparatus and method for charge pump slew rate control does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus and method for charge pump slew rate control, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for charge pump slew rate control will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3946806

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.