Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Slope control of leading or trailing edge of rectangular or...
Reexamination Certificate
2008-04-29
2008-04-29
Richards, N. Drew (Department: 2816)
Miscellaneous active electrical nonlinear devices, circuits, and
Signal converting, shaping, or generating
Slope control of leading or trailing edge of rectangular or...
C327S080000, C327S387000, C327S540000, C326S029000, C326S031000
Reexamination Certificate
active
07365585
ABSTRACT:
An apparatus and method for improving memory cell reliability is disclosed. The slew rate is reduced in an applied voltage signal used to program a memory cell when Fowler-Nordheim (FN) tunneling injection is detected. The applied programming signal is provided by a charge pump that is preferably a regulated charge pump. The charge pump is selectively controlled by a slew rate control circuit when FN tunneling injection is detected by a voltage level detection circuit at a predetermined threshold voltage level.
REFERENCES:
patent: 4685083 (1987-08-01), Leuschner
patent: 5359552 (1994-10-01), Dhong et al.
patent: 5596532 (1997-01-01), Cernea et al.
patent: 5638007 (1997-06-01), Sabin
patent: 5693570 (1997-12-01), Cernea et al.
patent: 5742193 (1998-04-01), Colli et al.
patent: 5768208 (1998-06-01), Bruwer et al.
patent: 5818766 (1998-10-01), Song
patent: 5828245 (1998-10-01), Brambilla et al.
patent: 5939909 (1999-08-01), Callahan, Jr.
patent: 5949259 (1999-09-01), Garcia
patent: 6127880 (2000-10-01), Holst et al.
patent: 6154101 (2000-11-01), Zou et al.
patent: 6388505 (2002-05-01), Ribellino et al.
patent: 6483377 (2002-11-01), White et al.
patent: 6492686 (2002-12-01), Pappert et al.
patent: 6646415 (2003-11-01), Nebrigic et al.
patent: 6788608 (2004-09-01), Tran et al.
patent: 6801080 (2004-10-01), Arcus
patent: 6819163 (2004-11-01), Gregoire, Jr.
patent: 6836179 (2004-12-01), Mizuno et al.
patent: 6859391 (2005-02-01), Combe et al.
patent: 6914476 (2005-07-01), Ingino, Jr.
patent: 6992934 (2006-01-01), Sarin et al.
patent: 6992937 (2006-01-01), Tran et al.
patent: 6998891 (2006-02-01), Hsu et al.
patent: 7015721 (2006-03-01), Nguyen et al.
patent: 7035151 (2006-04-01), Tran et al.
patent: 7049872 (2006-05-01), Diorio et al.
patent: 7061295 (2006-06-01), Saiki et al.
patent: 7250810 (2007-07-01), Tsen et al.
patent: 2004/0251955 (2004-12-01), Neidorff
patent: 2005/0134244 (2005-06-01), Sanzo et al.
patent: 2005/0219903 (2005-10-01), Daga
patent: 2006/0123280 (2006-06-01), Tran et al.
Horace G. Jackson et al. “Analysis and Design of Digital Integrated Circuits: In Deep Submicron Technology. Thid Edition. Semiconductor Memory Design” (2004) 359-398.
P. Canet et al. “Improvement of EEPROM cell reliability by optimization of signal programming.” Journal of Non-Crystalline Solids 280 (2001) 116-121. www.elsevier.com/locate/jnoncrysol.
Daga Jean-Michel
Fort Jimmy
Atmel Corporation
Luu An T.
Richards N. Drew
Schwegman Lundberg & Woessner, P.A.
LandOfFree
Apparatus and method for charge pump slew rate control does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus and method for charge pump slew rate control, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for charge pump slew rate control will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2787954