Apparatus and method for bonding silicon wafer to conductive...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257S748000, C257SE23062

Reexamination Certificate

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07432596

ABSTRACT:
A system and method is disclosed for bonding a substrate to a semiconductor die that is prone to curling when subjected to an elevated temperature in a solder reflow oven, for example, thereby improving the electrical and mechanical bonding for large dies, wafers, chips, and photovoltaic cells. In one embodiment, the substrate is adapted to curl to the same degree as the die to form a uniform gap between the substrate and die across the boundary there between. In another embodiment, solder used to bond the die and substrate is applied such that the volume deposited varies based on the expected gap between the die and substrate when heated to the melting temperature of the solder.

REFERENCES:
patent: 6177728 (2001-01-01), Susko et al.
patent: 7170188 (2007-01-01), Matayabas et al.
patent: 2004/0099958 (2004-05-01), Schildgen et al.

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