Apparatus and method for a pressure-sensitive device

Measuring and testing – Fluid pressure gauge – With pressure and/or temperature compensation

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G01L 708, G01L 906, G01L 1904

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046728538

ABSTRACT:
A pressure sensing device including a single crystal of silicon configured to have a diaphram portion, a frame portion and associated circuitry formed on the crystal is described. Piezo-resistive elements on the boundary of the frame and the diaphram portions of the crystal responds to changes in pressure. The piezo-resistive elements, associated elements, and connecting conducting paths are formed by thin film and/or doping techniques to provide a monolithically integrated circuit. The elements are passive and require only application of input voltages and detection of output signals to provide an operative component. Trimmable resistors are provided for compensation and resistive adjustment, and at least one resistive element provides temperature compensation.

REFERENCES:
patent: 4300395 (1981-11-01), Shirouzu et al.
patent: 4320664 (1982-03-01), Rehn et al.
patent: 4333349 (1982-06-01), Mallon et al.
patent: 4462018 (1984-07-01), Yang et al.
Beklemisheu et al, Meas. Tech. (U.S.A.), vol. 23, No. 5, pp. 405-408, May, 1980.
Roger Allan, "Sensors In Silicon", High Tech., Sep., 1984, pp. 43-50.

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