Apparatus and circuit for power supply, and apparatus for...

Details Apparatus and circuit for power supply, and apparatus for... Apparatus and circuit for power supply, and apparatus for...

2005-03-01

2005-03-01

Berhane, Adolf (Department: 2838)

Electricity: power supply or regulation systems

Output level responsive

Using a three or more terminal semiconductive device as the...

Reexamination Certificate

active

06861828

ABSTRACT:
A GaN-FET (10) having a small resistance at the time of conduction is disposed in the path of a main current that flows between an input terminal (11) and an output terminal (12). Moreover, there are provided a Zener diode (ZD) and a resistor (R) for setting an output voltage (Vout). As a result, reduction of size and weight is realized, and design including radiation design can be conducted flexibly. Time and labor required for design are remarkably reduced.

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J. C. Zolper, 1999 International Electron Devices Meeting, Technical Digest, pp. 389-392, “Wide-Bandgap Semiconductor Microwave Technologies: From Promise to Practice”, 1999.
S. Yoshida, The Furukawa Electric Co., Ltd., vol. 68, No. 7, pp. 787-792, “Electronic Device Using GaN”, 1999 (submitting English translation only, pp. 1-20).

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