Apparatus and a method for growing a single crystal

Details Apparatus and a method for growing a single crystal Apparatus and a method for growing a single crystal

1996-12-20

1998-08-04

Garrett, Felisa

Cutlery

17 13, 17213, 17217, 17218, C30B 3520

Patent

active

057887187

ABSTRACT:
An apparatus for growing a single crystal which comprises a quartz crucible in a chamber for containing a semiconductor melt from which a semiconductor single crystal rod is pulled, wherein there further comprises a cylinder concentrically surrounding the single crystal rod to be pulled whose top is connected to the edge of the opening at the center of the ceiling of the chamber in an airtight fashion and whose bottom hangs down toward the semiconductor melt, and a collar which spreads open upward and outward and whose outer circumferential part extends above the top end of the quartz crucible wherein the outer circumferential part is situated such that it does not touch the top end of the quartz crucible when said quartz crucible is at its highest position.

REFERENCES:
patent: 5316742 (1994-05-01), Tomioka et al.
"Apparatus For Low to Medium Level Oxygen Czochralski Silicon Crystal Growth"; IBM Technical Disclosure Bulletin; vol. 28; No. 1; Jun. 1985.

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