Aperture size control for etched vias and metal contacts

Details Aperture size control for etched vias and metal contacts Aperture size control for etched vias and metal contacts

1993-03-09

1994-08-30

Quach, T. N.

Fishing, trapping, and vermin destroying

437195, 156644, 156657, H01L 21302, H01L 21311

Patent

active

053428080

ABSTRACT:
A method for reduction and control of the size of etched apertures and vias for integrated circuit devices. A first aperture having a horizontal dimension greater than a desired aperture dimension is etched in an insulating layer. The sidewalls and bottom surface of the first aperture are then lined with a conformal material such as ozone/TEOS or silicon nitride, and the conformal material is anistropically etched. The anisotropic etch removes the conformal material from the bottom surface, but leaves an amount of conformal material on the sidewalls to reduce the horizontal dimension to the desired aperture dimension. Where ozone/TEOS is used, the conformal layer may be formed at relatively low temperatures such as T=390.degree. C.

REFERENCES:
patent: 4641420 (1987-02-01), Lee
patent: 4868138 (1989-09-01), Chan et al.
patent: 4872947 (1989-10-01), Wang et al.
patent: 4902533 (1990-02-01), White et al.
patent: 4910170 (1990-03-01), Motozima et al.
patent: 4952524 (1990-08-01), Lee et al.
patent: 5118382 (1992-06-01), Cronin et al.

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