Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents
Patent
1992-02-05
1993-03-30
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With provision for cooling the housing or its contents
257707, 257679, 257723, H01L 2334, H01L 2336
Patent
active
051986930
ABSTRACT:
A method and system are provided for forming apertures in the dielectric layers of an aluminum circuit to allow electrical connection to the aluminum core and enhance the thermal efficiency of integrated circuit devices attached thereto. Specifically, the apertures are formed to accommodate the ICs and allow them to be in direct contact with the aluminum core layer of the circuit card. The apertures are formed by placing a photoresist material on the aluminum core in locations corresponding to the desired locations of the aperture. The photoresist material is used as a "placeholder" during subsequent processing. The aluminum is then anodized to form aluminum oxide and a polymer material is then electrophoretically placed over the aluminum oxide. The photoresist "placeholder" is then removed, leaving an aperture that will accommodate an IC. The top of the polymer layer can then be circuitized to interconnect the chips.
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Imken Ronald L.
LaTorre Joseph
Clark S. V.
International Business Machines - Corporation
McBurney Mark E.
Mintel William
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