Aperture for use in electron beam system for pattern writing

Details Aperture for use in electron beam system for pattern writing Aperture for use in electron beam system for pattern writing

1995-01-19

1996-09-17

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2505051, 430 5, H01J 3709

Patent

active

055571107

ABSTRACT:
Window-like openings are cut through an aperture with cell projecting blocks using an electron beam system with pattern writing capability, and isolated patterns are supported by microbridges in respective openings. Widths of the microbridges are less than the resolution limitation of the electron beam, and thereby isolated patterns, such as frame-shaped shading patterns, can be written of a resist film, and the through-put of the lithography process can be increased. The aperture with cell projecting blocks can be formed so as to utilize both positive and negative resist film masks.

REFERENCES:
patent: 4950568 (1990-08-01), Kraus
patent: 5256881 (1993-10-01), Yamazaki et al.

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