Aperture for an exposure apparatus for forming a fine...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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Details

C355S053000, C355S071000, C430S004000, C430S005000, C359S016000, C359S016000

Reexamination Certificate

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06391677

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates to an aperture for a projection exposure apparatus which is used to form fine patterns on a semiconductor wafer and to a method for forming a fine pattern on a semiconductor wafer.
BACKGROUND OF THE INVENTION
In the field of an exposure processes, various technological improvements have been proposed from the view point of achieving a good resolution and a optimum depth of focus (DOF).
To obtain a good resolution and optimum DOF, various aperture configurations are disclosed in Japanese Laid Open Patent Publication: HEI5-275315, published on Oct. 22, 1993, and HEI7-29788, published on Jan. 31, 1995.
The aperture configuration is important in obtaining good resolution and the DOF characteristics. This is because an angle of light which is applied to a mask carrying a circuit pattern depends on the configuration of the aperture.
SUMMARY OF THE INVENTION
The first object of the invention is to provide an aperture which is used in an exposure process of a semiconductor manufacturing process, and which makes it possible to achieve a good resolution and an optimum depth of focus.
The second object of the invention is to provide a method for forming a fine pattern on a semiconductor wafer with using an improved aperture.
To achieve the first object, in a typical embodiment of the present invention, an aperture is comprised of a light transmissive region which is defined by first, second, third and fourth curves.
To achieve the second object, in an exposure process of a semiconductor manufacturing process, the exposure is carried using an aperture that has a light transmissive region which is defined by first, second, third and fourth curves, being interposed between a light source and a semiconductor wafer.
According to this invention, during the exposure process, each curve of the light transmissive regions contributes to an improvement in the resolution and optimum depth of focus (DOF).


REFERENCES:
patent: 5329333 (1994-07-01), Noguchi et al.
patent: 5610684 (1997-03-01), Shiraishi
patent: 5659429 (1997-08-01), Kudo
patent: 5677757 (1997-10-01), Taniguchi et al.
patent: 5978138 (1999-11-01), Kang et al.
patent: 2-166717 (1990-06-01), None
patent: 5-175100 (1993-07-01), None

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