Aperture diaphragm for a lithography apparatus

Details Aperture diaphragm for a lithography apparatus Aperture diaphragm for a lithography apparatus

1986-01-30

1991-01-01

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250396R, 250398, 313422, 313432, H01J 3704, H01J 3730

Patent

active

049820990

ABSTRACT:
An aperture diaphragm for lithography apparatus which has a line-shaped multi-hole structure comprising blanking electrodes for generating a plurality of individually blankable particle beam probes for lithography apparatus comprising a particle beam source, a condenser lens, a blanking diaphragm and imaging optics and a workpiece to be structured such as a semiconductor body wherein a simple aperture diaphragm is composed of a high resistant substrate such as silicon or silicon dioxide upon which blanking electrodes are formed in the form of interconnects which are provided with terminals for applying blanking voltages.

REFERENCES:
patent: 4409487 (1983-10-01), Kuschel et al.
patent: 4524278 (1985-06-01), LePoole
patent: 4563613 (1986-01-01), Genovese et al.
IEEE Transactions on Electronic Devices, vol. ED 26, No. 4, Apr. 1979, pp. 663-674, Recent Advances in Electron-Beam Lithography for the High-Volume Production of BLSIDevices by Hans C. Pfeiffer.

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