Aperture comprising an oxidized region and a semiconductor mater

Details Aperture comprising an oxidized region and a semiconductor mater Aperture comprising an oxidized region and a semiconductor mater

1996-08-19

1998-03-03

Healy, Brian

Coherent light generators

Particular active media

Semiconductor

372 43, 372 96, 257 30, 257189, H01S 3034

Patent

active

057243743

ABSTRACT:
An improved aperture is provided. The aperture comprises: at least a first layer; the first layer being oxidized in a laterally oriented first region; the first layer being modified within a laterally oriented second region, the second region being oxidized less than the first region; a second layer disposed in communication with the first layer, the second layer being oxidized less than the first layer; and a non-planar boundary having top and bottom boundary surfaces and side walls connecting the top and bottom boundary surfaces, the top boundary surface defined as a top surface of the second layer above the laterally oriented first region and the bottom boundary surface defined as a bottom surface of the laterally oriented second region, the first and second regions defining the aperture.

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