AP1 layer for TMR device

Details AP1 layer for TMR device AP1 layer for TMR device

2011-07-19

2011-07-19

Castro, Angel A. (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

07983011

ABSTRACT:
A TMR read head with improved voltage breakdown is formed by laying down the AP1 layer as two or more layers. Each AP1 sub-layer is exposed to a low energy plasma for a short time before the next layer is deposited. This results in a smooth surface, onto which to deposit the tunneling barrier layer, with no disruption of the surface crystal structure of the completed AP1 layer.

REFERENCES:
patent: 6347049 (2002-02-01), Childress et al.
patent: 6452204 (2002-09-01), Ishiwata et al.
patent: 6483675 (2002-11-01), Araki et al.
patent: 6655006 (2003-12-01), Pinarbasi
patent: 6735058 (2004-05-01), Lin et al.
patent: 6759081 (2004-07-01), Huganen et al.
patent: 6960480 (2005-11-01), Horng et al.
patent: 7160572 (2007-01-01), Fujikata et al.
patent: 7807218 (2010-10-01), Parkin
patent: 2002/0003684 (2002-01-01), Nakashio et al.
patent: 2006/0012926 (2006-01-01), Parkin
“Low-Resistance Tunnel Magnetoresistive Head,” by K. Ohashi et al., IEEE Transactions on Magnetics, vol. 36, No. 5, Sep. 5, 2000, pp. 2549-2553.
“Spin Dependent Tunnel Junctions for Memory and Read-Head Applications,” by Freitas et al., IEEE Trans. on Magnetics, vol. 36, No. 58, Sep. 5, 2000, pp. 2796-2801.
“Demonstrating a Tunneling Magneto-Resistive Read Head,” by Dian Song et al., IEEE Trans. on Magnetics, vol. 36, No. 5, Sep. 5, 2000, pp. 2545-2548.

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