AP pinned spin valve sensor with pinning layer reset and ESD pro

Dynamic magnetic information storage or retrieval – Head – Hall effect

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360 75, G11B5/39;5/40

Patent

active

059034157

ABSTRACT:
An antiparallel pinned spin valve sensor is provided in combination with electrostatic discharge (ESD) protection circuits, for preventing ESD destabilization of the magnetic spins of an antiferromagnetic pinning layer, and a reset pulse generator, for generating a pulse for resetting the magnetic spins of the antiferromagnetic pinning layer, wherein the ESD circuits and the reset pulse generator are compatible with one another. A first ESD protection circuit has a turn-on voltage in the direction of the sense current and a second ESD protection has a turn-on voltage in a direction opposite to the sense current. The turn-on voltage of the first ESD protection circuit is sufficiently high to minimize shunting of the sense current past the AP spin valve sensor. The reset voltage is higher than the sense voltage and may be just less than the turn-on voltage of the first ESD protection circuit. The turn-on voltage of the first ESD protection circuit may be slightly less than the melting temperatures of the layers of the AP spin valve sensor. The turn-on voltage of the second ESD protection circuit is less than the turn-on voltage of the first ESD protection circuit, such as 50% thereof. The turn-on voltage of the second ESD protection circuit should be less since no reset function is implemented in that direction and ESDs in that direction will destabilize the antiferromagnetic layer.

REFERENCES:
patent: 5465185 (1995-11-01), Heim et al.
patent: 5650887 (1997-07-01), Dovek et al.
patent: 5657190 (1997-08-01), Araki et al.
patent: 5748412 (1998-05-01), Murdock et al.
patent: 5757591 (1998-05-01), Carr et al.
patent: 5828529 (1998-10-01), Gill

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