Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1997-01-24
1999-10-19
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117208, 117216, C30B 3500
Patent
active
059682671
ABSTRACT:
The uniformity of solid crystals grown by pulling a seed crystal from a molten charge material in a crucible is increased by eliminating vibration by supporting a housing for the solid crystal on a vibration isolator which rests on a supporting floor. Vibration isolators may also be placed between a crucible lift and rotation mechanism and the supporting floor. The crystal pull head for pulling the seed crystal also can be isolated from the remainder of the apparatus by vibration isolators.
REFERENCES:
patent: 4662860 (1987-05-01), Iseler et al.
patent: 5725661 (1998-03-01), Fusegawa et al.
General Signal Technology Corporation
Hiteshew Felisa
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