Antiresonant Fabry-Perot p-i-n modulator

Details Antiresonant Fabry-Perot p-i-n modulator Antiresonant Fabry-Perot p-i-n modulator

1993-01-27

1994-09-06

Davie, James W.

Coherent light generators

Particular beam control device

Q-switch

372 18, 372 26, H01S 3098

Patent

active

053454545

ABSTRACT:
The advantages of both active and passive modelocking techniques are realized within a single device by providing a p-i-n modulator formed at antiresonance within a Fabry-Perot etalon. The p-i-n modulator actively modulates light within the laser cavity by introducing periodic loss in response to changing voltages applied to the modulator. The p-i-n modulator includes an intrinsic region that is disposed between a p-doped region and an n-doped region. The modelocking performance of the p-i-n modulator is enhanced by the saturable absorber action of the intrinsic region.

REFERENCES:
patent: 4597638 (1986-07-01), Chemla et al.
patent: 4720309 (1988-01-01), Deveaud et al.
patent: 4860296 (1989-08-01), Chemla et al.
patent: 4930131 (1990-05-01), Sizer, II
patent: 5007059 (1991-04-01), Keller et al.
U. Keller, IEEE Jrn. Quantum Electronics, Oct. 1992 "Ultrafast Solid-State Mode-Locked Lasers . . .".
G. Livescu, et al., "Role of Electrorefraction in Quantum-Well Fabry-Perot . . .", Appl. Phys. Lett. 60 (12) 23 Mar. 1992, pp. 1418-1420.
J. E. Cunningham, et al., "Pseudomorphic InGaAs-GaAsP Quantum-Well . . .", Appl. Phys. Lett. 60 (6), 10 Feb. 1992, pp. 727-729.
S. S. Charschan, "Laser Fundamentals", Lasers In Industry, Van Nostrand Reinhold Co., Chap. I, pp. 21-28 (no date).
P. Das, "Q-Switching & Mode Locking", Lasers and Optical Engineering, Springer-Verlag, Chap. III, pp. 240-253 (no date).
S. L. Chin, Fundamentals of Laser Optoelectronics, World Scientific, Series in Optics & Photonics, vol. I, pp. 232-234 (no date).
H. A. Macleon, Thin-Film Optical Filters, 2nd Ed. 1986, Adam Hilger Ltd., Appendix-Characteristics of Thin-Film . . . pp. 509-511 (no month).
Harder et al., Appl. Phys. Lett., vol. 42, No. 9, May 1, 1983 "Passive Mode Locking of Buried Heterostructure . . .", pp. 772-774.
Tsang et al., Appl. Phys. Lett., vol. 43, No. 4, Aug. 15, 1983, "Mode-Locked Semiconductor Lasers . . .", pp. 339-341.
U. Keller et al., Optics Letters, vol. 15, No. 23, Dec. 1, 1990, "Coupled-Cavity Resonant Passive . . .", pp. 1377-1379.
Lee et al., Appl. Phys. Lett., vol. 58, No. 14, Apr. 8, 1991, "Active-Passive Mode-Locked Nd:YAG . . .," 1464-66.
U. Keller et al., Optics Letters, vol. 16, No. 6, Mar. 15, 1991, "Coupled-Cavity Resonant Passive Mode . . .", pp. 390-392.
Haus et al., Jrnl Opt. Soc. Am.B, vol. 8, No. 6 Jun. 1991, "Theory of Coupled-Cavity Mode Locking . . . ", pp. 1252-1258.

Affiliated with

Also associated with

Rating

Antiresonant Fabry-Perot p-i-n modulator does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Antiresonant Fabry-Perot p-i-n modulator, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Antiresonant Fabry-Perot p-i-n modulator will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1334433