Antireflective polymide dielectric for photolithography

Details Antireflective polymide dielectric for photolithography Antireflective polymide dielectric for photolithography

1995-04-19

1996-07-16

Seidleck, James J.

Synthetic resins or natural rubbers -- part of the class 520 ser

Synthetic resins

Mixing of two or more solid polymers; mixing of solid...

525422, 525436, 428209, 428901, C08L 7700, C08G 7310

Patent

active

055367925

ABSTRACT:
A process is disclosed for making circuit elements by photolithography comprising depositing an antireflective polyimide or polyimide precursor layer on a substrate and heating the substrate at 200.degree. C. to 500.degree. to provide a functional integrated circuit element that includes an antireflective polyimide layer. The antireflective polyimide layer contains a sufficient concentration of at least one chromophore to give rise to an absorbance sufficient to attenuate actinic radiation at 405 or 436 nm. Preferred chromophores include those arising from perylenes, naphthalenes and anthraquinones. The chromophore may reside in a dye which is a component of the polyimide coating mixture or it may reside in a residue which is incorporated into the polyimide itself.

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