Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-08-29
2009-10-20
Hoang, Quoc D (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C438S636000, C430S270100, C257SE21029, C257SE51046
Reexamination Certificate
active
07605439
ABSTRACT:
The invention includes new organic-containing compositions that can function as an antireflective layer for an overcoated photoresist. Compositions of the invention also can serve effectively as a hard mask layer by exhibiting a sufficient plasma etch selectivity from an undercoated layer. Preferred compositions of the invention have a high Si content and comprise a blend of distinct resins.
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A. Grill, Plasma in Materials Fabrication, 1994, IEEE Press Mark, p. 224, 5-th paragraph*.
Gallagher Michael K.
Gronbeck Dana A.
Kwok Amy M.
Truong Chi Q.
Zampini Anthony
Corless Peter F.
Edwards Angell Palmer & & Dodge LLP
Frickey Darryl P.
Hoang Quoc D
Rohm and Haas Electronic Materials LLC
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