Antireflective hard mask compositions

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C438S636000, C430S270100, C257SE21029, C257SE51046

Reexamination Certificate

active

07605439

ABSTRACT:
The invention includes new organic-containing compositions that can function as an antireflective layer for an overcoated photoresist. Compositions of the invention also can serve effectively as a hard mask layer by exhibiting a sufficient plasma etch selectivity from an undercoated layer. Preferred compositions of the invention have a high Si content and comprise a blend of distinct resins.

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