Antireflective coating and wiring line stack

Details Antireflective coating and wiring line stack Antireflective coating and wiring line stack

1996-01-19

2000-03-21

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257764, 257765, H01L 310232

Patent

active

060406135

ABSTRACT:
Titanium aluminum nitrogen ("Ti--Al--N") is deposited onto a semiconductor substrate area to serve as an antireflective coating. For wiring line fabrication processes, the Ti--Al--N layer serves as a cap layer which prevents unwanted reflection of photolithography light (i.e., photons) during fabrication. For field emission display devices (FEDs), the Ti--Al--N layer prevents light originating at the display screen anode from penetrating transistor junctions that would hinder device operation. For the wiring line embodiment an aluminum conductive layer and a titanium-aluminum underlayer are formed beneath the antireflective cap layer. The Ti--Al underlayer reduces the shrinkage which occurs in the aluminum conductive layer during heat treatment.

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