Coating processes – Direct application of electrical – magnetic – wave – or... – Polymerization of coating utilizing direct application of...
Reexamination Certificate
2003-04-09
2008-03-25
Nakarani, D. S (Department: 1794)
Coating processes
Direct application of electrical, magnetic, wave, or...
Polymerization of coating utilizing direct application of...
C427S503000, C427S568000, C427S574000, C427S578000
Reexamination Certificate
active
07348041
ABSTRACT:
A low refractive index SiO2film is provided which uses a starting material for forming an SiO2film and has a lower refractive index than the conventional SiO2film. A starting material gas comprising a gas containing a fluorine atom, a gas containing a silicon atom and an alkyl group having 1 to 4 carbon atoms or an alkyl group having 1 to 4 carbon atoms with a part or the whole of hydrogen atoms substituted by a fluorine atom, and a gas containing an oxygen atom is subjected to plasma CVD in a vacuum chamber1to form an SiO2film on a web2in a plasma zone5. The SiO2film thus formed has, at least one low refractive index element selected from a fluorine atom, an alkyl group having 1 to 4 carbon atoms, and an alkyl group having 1 to 4 carbon atoms with a part or the whole of hydrogen atoms substituted by a fluorine atom, and the SiO2film with the low refractive index element introduced thereinto has a lower refractive index than an SiO2film with the low refractive index element not introduced thereinto.
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Dai Nippon Printing Co. Ltd.
Nakarani D. S
Oliff & Berridg,e PLC
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