Antiparallel pinned spin valve with read signal symmetry

Dynamic magnetic information storage or retrieval – Head – Hall effect

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G11B 530

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active

058285296

ABSTRACT:
A thin film magnetoresistive (MR) spin valve read sensor is provided which has positive and negative read signal symmetry about a zero bias point of a transfer curve upon sensing positive and negative magnetic incursions of equal magnitude from a moving magnetic medium, the sensor including a ferromagnetic free layer which has a magnetic moment which is free to rotate in first and second directions from a position which corresponds to the zero bias point upon sensing the positive and negative magnetic incursions respectively, an antiparallel pinned layer, an antiferromagnetic layer immediately adjacent the antiparallel pinned layer which pins the magnetic moment of the antiparallel pinned layer along a pinned direction, an electrically conductive nonmagnetic spacer layer sandwiched between the free layer and the antiparallel pinned layer so that, upon sensing the positive and negative magnetic incursions, the magnetic moment of the free layer rotates in the first and second directions relative to the pinned direction of the magnetic moment of the pinned layer, thus causing an increase or decrease in magnetoresistance respectively, and a sense current source for applying a sense current through the sensor in a predetermined direction and of a predetermined magnitude so that, in response to the increase and decrease in magnetoresistance, the sensor produces positive and negative read signal symmetry about the zero bias point.

REFERENCES:
patent: 5465185 (1995-11-01), Heim et al.
patent: 5666248 (1997-09-01), Gill
patent: 5688605 (1997-11-01), Iwasaki

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