Antiparallel-pinned spin valve sensor

Dynamic magnetic information storage or retrieval – Head – Hall effect

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G11B 539

Patent

active

060381078

ABSTRACT:
An AP-Pinned SV sensor with the preferred structure of NiO/Ni--Fe/Co/Ru/Co/Cu/Ni--Fe/Cap where the pinned layer comprises first and second ferromagnetic pinned layers separated from each other by an anti-parallel coupling layer. The first ferromagnetic pinned layer further comprises a first pinned sub-layer of Ni--Fe and a second pinned sub-layer of Co where the first pinned sub-layer of Ni--Fe is formed over and in direct contact with the NiO antiferromagnetic (AFM) layer. Addition of the first pinned sub-layer of Ni--Fe isolates the second pinned sub-layer of Co from the NiO AFM layer resulting in dramatic improvement in the pinning field and magnetic moment control of the laminated AP-pinned layer.

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