Antiparallel (AP) pinned spin valve sensor with giant magnetores

Details Antiparallel (AP) pinned spin valve sensor with giant magnetores Antiparallel (AP) pinned spin valve sensor with giant magnetores

1998-11-09

2000-09-19

Heinz, A. J.

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

G11B 530

Patent

active

061221503

ABSTRACT:
The present invention is an external field stabilized and near zero magnetostrictive double spin valve sensor with giant magnetoresistive (GMR) enhancing, antiparallel pinned and sense current field pinned layers. In a preferred embodiment of the invention the AP pinned layer has first and second films that are made of cobalt iron (Co.sub.90 Fe.sub.10). In order to enhance the spin dependent scattering first and second GMR enhancing layers are employed which are also constructed of cobalt iron (Co.sub.90 Fe.sub.90). Further, in order to double the spin valve effect a sense current field (SCF) pinned layer is employed which is pinned in the same direction as the second film of the AP pinned layer. The SCF pinned layer is also constructed of cobalt iron (Co.sub.90 Fe.sub.10). In the preferred embodiment all of the magnetic layers are constructed of cobalt iron (Co.sub.90 Fe.sub.10) so that their magnetic moments are returned to their original positions after the occurrence of an external field. Further, the cobalt iron (Co.sub.90 Fe.sub.10) has near zero magnetostriction so that stress induced anisotropy does not alter the magnetic properties of these layers. The high resistance of cobalt iron (Co.sub.90 Fe.sub.10) in the AP pinned layer and the SCF pinned layer ensures that a minimum amount of sense current field is shunted.

REFERENCES:
patent: 5701223 (1997-12-01), Fontana
patent: 5958611 (1999-09-01), Ohta

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