Antimony-doped stannic oxide thick film gas sensor

Coating processes – Electrical product produced – Condenser or capacitor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427125, 4271261, 4271263, 4271266, 4273722, B05D 512

Patent

active

046146695

ABSTRACT:
A method of preparing an antimony-doped stannic oxide gas detecting film device responsive to the combustible constituents in an environment of interest is disclosed. Stannic oxide is structurally doped with antimony for use as a thick film gas detecting element.

REFERENCES:
patent: 3644795 (1972-02-01), Taguchi
patent: 3695848 (1972-10-01), Taguchi
patent: 3835529 (1974-09-01), Taguchi
patent: 3864628 (1975-02-01), Klass
patent: 3900815 (1975-08-01), Taguchi
patent: 3901067 (1975-08-01), Boardman
patent: 4033169 (1977-07-01), Fujishiro
patent: 4396899 (1983-08-01), Ohno
patent: 4397888 (1983-08-01), Yannopoulos

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Antimony-doped stannic oxide thick film gas sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Antimony-doped stannic oxide thick film gas sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Antimony-doped stannic oxide thick film gas sensor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-984233

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.