Antimonide-based optical devices

Details Antimonide-based optical devices Antimonide-based optical devices

2007-01-30

2007-01-30

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

C257S189000, C257S201000, C257S103000, C257SE31021

Reexamination Certificate

active

11040430

ABSTRACT:
An optical device includes an antimonide-containing substrate, and an antimonide-containing n-doped layer provided on the substrate. The optical device further includes an antimonide-containing i-doped layer provided on the n-doped layer, an antimonide-containing p-doped layer provided on the i-doped layer, and an antimonide-containing p+-doped layer provided on the p-doped layer.

REFERENCES:
patent: 6724018 (2004-04-01), Ando et al.

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