Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1995-04-14
1997-01-07
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257 50, 257208, 257209, 257528, H01L 2904, H01L 2710, H01L 2900
Patent
active
055920160
ABSTRACT:
An antifuse comprises first and second electrodes separated by an antifuse material having a thickness selected to impart a desired target programming voltage to the antifuse. The antifuse material comprises a solid material stable at temperatures below about 600.degree. C., having a defect density less than about 100 defects/cm.sup.2, a breakdown field less than about 10 megavolts/cm, a dielectric constant lower than about 4.0, a resistivity of greater than about 10.sup.4 ohm-cm. The antifuse material may comprise organic materials such as polyimides compatible with high-temperature processes including cured polyamic acids, pre-imidazed polymers, photo-sensitive polyimides, and other polimides such as pyralin, probimide, PIQ, etc. The antifuse materials of the present invention also include fluorinated polymers having very low dielectric constants, such as teflon, paralines, polyphenylquinoxaline, benzocyclobutene polymers, and perfluoropolymers.
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Chapman, et al., "A laser linking Process for Restructurable VLSI", CLEO '82, Apr. 14-16, 1982, MIT Lincoln Laboratory.
Eltoukhy Abdelshafy A.
Go Ying
McCollum John L.
Actel Corporation
Martin Wallace Valencia
Saadat Mahshid D.
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