Antifuse with improved antifuse material

Details Antifuse with improved antifuse material Antifuse with improved antifuse material

1996-11-07

1998-08-04

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

257 77, 257529, 257530, 257751, H01L 2900

Patent

active

057897646

ABSTRACT:
According to the present invention, an antifuse comprises first and second conductors separated by an antifuse material having a thickness selected to impart a desired target programming voltage to the antifuse. The antifuse material is of SiC and provides a solid material stable at temperatures below about 350.degree. C., a resistivity of greater than about 10.sup.12 ohm-cm. The antifuse material may be applied using chemical vapor deposition (CVD) techniques. Also, the SiC antifuse material of the present invention may take any one of a number of via antifuse and stacked antifuse forms.

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