Antifuse with a silicide layer overlying a diffusion region

Details Antifuse with a silicide layer overlying a diffusion region Antifuse with a silicide layer overlying a diffusion region

1998-12-15

2000-02-29

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257773, 257665, 438131, H01L 2900

Patent

active

060312750

ABSTRACT:
The large voltage required to program a conventional antifuse is substantially reduced by forming the antifuse with a diffusion region and an overlying layer of silicide. The silicide layer is contacted at opposite ends so that a current can flow in through contacts at one end, and out through contacts at the opposite end. When unprogrammed, a voltage is applied to the semiconductor material in which the diffusion region is formed to prevent the diffusion region to semiconductor material from being forward biased. The antifuse is programmed by heating the silicide layer until the silicide layer agglomerates. The silicide layer can be heated by passing a current through the silicide layer.

REFERENCES:
patent: 4743491 (1988-05-01), Asada et al.
patent: 4796075 (1989-01-01), Whitten
patent: 5066998 (1991-11-01), Fischer et al.
patent: 5233206 (1993-08-01), Lee et al.
patent: 5708291 (1998-01-01), Bohr et al.
patent: 5882998 (1999-03-01), Sur, Jr. et al.
Hamdy, E. et al., "Dielectric Based Antifuse For Logic and Memory IC's," International Electron Devices Meeting (Dec. 11-14, 1988) pp. 786-789.
Liu, D. et al, "Scaled Dielectric Antifuse Structure for Field-Programmable Gate Array Applications," IEEE Electron Devices Letters, vol. 12, No. 4, Apr. 1991, pp. 151-153.
Chen, K., et al. "A Sublithographic Antifuse Structure for Field-Programmable Gate Array Applications," IEEE Electron Devices Letters, vol. 13, No. 1, Jan. 1992, pp. 53-55.

Affiliated with

Also associated with

Rating

Antifuse with a silicide layer overlying a diffusion region does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Antifuse with a silicide layer overlying a diffusion region, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Antifuse with a silicide layer overlying a diffusion region will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-685594