Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1996-10-17
1998-11-03
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257751, H01L 2900, H01L 2348, H01L 2352, H01L 2940
Patent
active
058313257
ABSTRACT:
An antifuse structure of the present invention comprises an antifuse layer and a bottom electrode which are immune to the damages caused by harmful processing environment. The three major components of the antifuse--the bottom electrode, the antifuse layer and the top buffer layer--are formed consecutively without any photolithography or etching step in-between. The top buffer layer is defined before the bottom electrode. This antifuse structure can substantially improve the antifuse manufacturability.
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