Antifuse structures

Details Antifuse structures Antifuse structures

1997-02-03

1998-10-13

Wallace, Valenna Martin

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 50, 257 54, 257530, H01L 2904, H01L 2702

Patent

active

058215581

ABSTRACT:
An antifuse structure includes a first electrode, a layer of enhanced amorphous silicon over the first electrode, and a second electrode over the layer of enhanced amorphous silicon. The layer of enhanced amorphous silicon is formed by an ion-implantation of a neutral species and a dopant species into a deposited layer of amorphous silicon, such that the antifuse structure will have a stable conductive link in a programmed state and such that it will be less susceptible to off-state leakage in an unprogrammed state. A method for making an antifuse structure includes forming a lower electrode, depositing an amorphous silicon layer over the lower electrode, ion-implanting a neutral species and a dopant species into the amorphous silicon layer, and forming an upper electrode over the amorphous silicon layer.

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