Antifuse structure with double oxide layers

Details Antifuse structure with double oxide layers Antifuse structure with double oxide layers

1994-01-10

1996-01-23

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 50, 257530, H01L 2904, H01L 2702

Patent

active

054867070

ABSTRACT:
An antifuse for programmable integrated circuit devices is formed above a refractory metal on a thin native oxide layer and comprises an amorphous compound resulting from an PECVD deposition using a combination of silane gas and nitrogen. After formation of the amorphous antifuse layer, the layer is implanted with an atomic species such as argon. The thin oxide layer is formed on the surface of a refractory metal, therefore the process of forming the oxide is slow, the oxide is of even thickness, and the thickness can be controlled precisely. In a preferred embodiment, a second thin oxide layer is formed above the doped amorphous layer. The oxide layers significantly reduce the leakage current of an unprogrammed antifuse. Because of these thin oxide layers and the implantation step, the amorphous layer may be as thin as 200 .ANG..

REFERENCES:
patent: 5070384 (1991-12-01), McCollum et al.
patent: 5181096 (1993-01-01), Forouhi
Cook et al., "Amorphous Si antifuse technology for bipolar Proms", Bipolar Circuits and Technology Meeting, IEEE, pp. 99-100, 1986.

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