Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2008-01-29
2008-01-29
Landau, Matthew C. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE23147, C438S131000, C438S467000
Reexamination Certificate
active
07323761
ABSTRACT:
The present invention provides antifuse structures having an integrated heating element and methods of programming the same, the antifuse structures comprising first and second conductors and a dielectric layer formed between the conductors, where one or both of the conductors functions as both a conventional antifuse conductor and as a heating element for directly heating the antifuse dielectric layer during programming.
REFERENCES:
patent: 5250459 (1993-10-01), Lee
patent: 5412593 (1995-05-01), Magel et al.
patent: 5523612 (1996-06-01), Karpovich
patent: 5565702 (1996-10-01), Tamura et al.
patent: 5774011 (1998-06-01), Au et al.
patent: 5811870 (1998-09-01), Bhattacharyya et al.
patent: 5903041 (1999-05-01), La Fleur et al.
patent: 6093937 (2000-07-01), Yamazaki et al.
patent: 6288437 (2001-09-01), Forbes et al.
patent: 6396120 (2002-05-01), Bertin et al.
patent: 6617914 (2003-09-01), Kothandaraman
patent: 6624499 (2003-09-01), Kothandaraman et al.
patent: 6661330 (2003-12-01), Young
patent: 6750530 (2004-06-01), Klaasen et al.
patent: 6777773 (2004-08-01), Knall
patent: 6788607 (2004-09-01), Duval et al.
patent: 6944054 (2005-09-01), Rueckes et al.
patent: 2003/0201514 (2003-10-01), Radens et al.
patent: 2004/0051162 (2004-03-01), Chidambarrao et al.
patent: 2006/0102982 (2006-05-01), Park et al.
Degraeve “Temperature acceleration of oxide breakdown and its impact on ultra-thin gate oxide reliability” 1999 Symposium on VLSI Technology Digest of Technical Papers, 1999, pp. 59-60.
C. Kothandaraman et al., “Electrically Programmable Fuse (eFUSE) Using Electromigration in Silicides”, IEEE Electron Device Letters, vol. 23, No. 9, Sep. 2002, pp. 523-525.
Iyer Subramanian S.
Kothandaraman Chandrasekheran
Park Byeongju
Abate Esq. Joseph P.
Bilak, Esq. Mark
International Business Machines - Corporation
Landau Matthew C.
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