Antifuse structure and method of use

Details Antifuse structure and method of use Antifuse structure and method of use

2006-07-04

2006-07-04

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S050000, C257S928000, C257SE23147, C438S131000

Reexamination Certificate

active

07071534

ABSTRACT:
An antifuse structure and method of use are disclosed. According to one embodiment of the present invention a first programming voltage is coupled to a well of a first conductivity type in a substrate of a second conductivity type in an antifuse. A second programming voltage is coupled to a conductive terminal of the second conductivity type in the antifuse to create a current path through an insulator between the conductive terminal and the well to program the antifuse. The first programming voltage may be coupled to an ohmic contact in the well in the antifuse.

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Neamen, D A., “Semiconductor Physics & Devices Basic Principles”,The McGraw-Hill Companies, Inc,Second Edition,428-434 & 96-98.

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