Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1996-10-18
1998-01-06
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257 50, 257751, 257752, 257764, H01L 2900
Patent
active
057058490
ABSTRACT:
An improved antifuse design has been achieved by providing a structure comprising pair of alternating layers of silicon nitride and amorphous silicon sandwiched between two dual damascene connectors. Said structure provides the advantage, over the prior art, that all electrically active surfaces of the fuse structure are planar, so no potential failure spots resulting from surface unevenness can be formed. A process for manufacturing said fuse structure is also provided and involves fewer masking steps than related structures of the prior art.
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Chan Lap
Zheng Jiazhen
Ackerman Stephen B.
Carroll J.
Chartered Semiconductor Manufacturing Pte Ltd.
Saile George O.
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