Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1997-05-02
1998-09-22
Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257 50, 257760, 438467, H01L 2904
Patent
active
058118705
ABSTRACT:
According to the preferred embodiment, an antifuse structure and method for personalizing a semiconductor device is provided that overcomes the limitations of the prior art. The preferred embodiment antifuse comprises a two layer transformable insulator core between two electrodes. The transformable core is normally non-conductive but can be transformed into a conductive material by supplying a sufficient voltage across the electrodes. The two layer core preferably comprises an injector layer and a dielectric layer. The injector layer preferably comprises a two phase material such as silicon rich nitride or silicon rich oxide. Initially, the injector layer and dielectric layer are non-conductive. When a sufficient voltage is applied the core fuses together and becomes conductive.
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Bhattacharyya Arup
Geffken Robert M.
Lam Chung H.
Leidy Robert K.
Chadurjian Mark F.
International Business Machines - Corporation
Wallace Valencia
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